VOLTAGE DEPENDENCE OF BARRIER HEIGHT IN AlN TUNNEL JUNCTIONS
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1754505
Reference2 articles.
1. Photoemissive Determination of Barrier Shape in Tunnel Junctions
2. Barrier Height Studies on Metal‐Semiconductor Systems
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Electric field penetration in Au/Nb:SrTiO3 Schottky junctions probed by bias-dependent internal photoemission;Applied Physics Letters;2011-05-09
2. Mechanical and electrical coupling at metal-insulator-metal nanoscale contacts;Applied Physics Letters;2008-11-17
3. Interphase Physics: Linking Knowledge on Electron–Molecule Interactions in Gases to Knowledge on Such Processes in Condensed Matter;Electron–Molecule Interactions and their Applications;1984
4. Measurement of the work function of some metals using internal voltage in MIM structures;Journal of Applied Physics;1979-04
5. On the Determination of the Metal-Insulator Work Function by Photoelectric Measurements;Physica Status Solidi (a);1975-12-16
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3