Accurate extraction of ΔI/I due to random telegraph noise in gate edge current of high-k n-type metal-oxide-semiconductor field-effect transistors under accumulation mode-Reference-Cited by-同舟云学术

Accurate extraction of ΔI/I due to random telegraph noise in gate edge current of high-k n-type metal-oxide-semiconductor field-effect transistors under accumulation mode

Published:2011-01-10 Issue:2 Volume:98 Page:023505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Ju-Wan,Park Chan Hyeong,Shin Hyungcheol,Park Byung-Gook,Lee Jong-Ho

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3543901

Reference18 articles.

1. Review on high-k dielectrics reliability issues

2. Influence of<tex>$hbox Al_2hbox O_3$</tex>Dielectrics on the Trap-Depth Profiles in MOS Devices Investigated by the Charge-Pumping Method

3. Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics

4. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise

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