Comparative studies on ferroelectric switching kinetics of sputtered Hf0.5Zr0.5O2 thin films with variations in film thickness and crystallinity
Author:
Affiliation:
1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 17104, South Korea
Funder
National Research Foundation of Korea
Electronics and Telecommunications Research Institute
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0013487
Reference46 articles.
1. Ferroelectricity in hafnium oxide thin films
2. First demonstration of vertically stacked ferroelectric Al doped HfO2 devices for NAND applications
3. Ferroelectric deep trench capacitors based on Al:HfO2 for 3D nonvolatile memory applications
4. Advancing Nonvolatile Computing With Nonvolatile NCFET Latches and Flip-Flops
5. HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications
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