Insituobservation of fractal growth duringa‐Si crystallization in a Cu3Si matrix
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348995
Reference7 articles.
1. Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si
2. Metal contact induced crystallization in films of amorphous silicon and germanium
3. Temperature dependence of fractal formation in ion-implanteda-Ge/Au bilayer thin films
4. Diffusion-Limited Aggregation, a Kinetic Critical Phenomenon
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