Carrier capture into InGaAs/GaAs quantum wells via impurity mediated resonant tunneling
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121248
Reference15 articles.
1. Dynamics of exciton formation and relaxation in GaAs quantum wells
2. Dynamics of carrier transport and carrier capture inIn1−xGaxAs/InP heterostructures
3. Direct determination of carrier capture times in low‐dimensional semiconductor lasers: The role of quantum capture in high speed modulation
4. Recombination and thermal emission of excitons in shallow CdTe/Cd1−xMgxTe quantum wells
5. Recombination and thermal emission of excitons in shallow CdTe/Cd1−xMgxTe quantum wells
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1. Spin-polarized surface-emitting lasers;physica status solidi (c);2006-12
2. Characterization of Proton-Irradiated InGaAs/GaAs Multiple Quantum Well Structures by Nonresonant Transient Four-Wave Mixing Technique;Japanese Journal of Applied Physics;2000-10-15
3. Non-destructive optical characterization of the surface region in bulk semiconductors and heterostructures;Thin Solid Films;2000-03
4. Carrier capture and escape inInxGa1−xAs/GaAsquantum dots: Effects of intermixing;Physical Review B;1999-02-15
5. Carrier Capture and Emission in Self-assembled InGaAs/GaAs Quantum Dots;Physica Scripta;1999
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