Characterization of Te‐doped GaSb grown by molecular beam epitaxy using SnTe
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350296
Reference24 articles.
1. Growth of III–V semiconductors by molecular beam epitaxy and their properties
2. Molecular‐beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy
3. Molecular Beam Epitaxy of GaSb and GaSbxAs1-x
4. Sn and Te doping of molecular beam epitaxial GaAs using a SnTe source
5. Room Temperature Operation of Al0.17Ga0.83Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
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