Effect of the statistical shift on the anomalous conductivities ofn‐type hydrogenated amorphous silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337412
Reference13 articles.
1. Thermoelectric power in phosphorous doped amorphous silicon
2. Density of states in amorphous silicon determined from transport experiments
3. Electronic transport in hydrogenated amorphous silicon
4. Identification of the Dangling-Bond State within the Mobility Gap ofa-Si: H by Depletion-Width-Modulated ESR Spectroscopy
5. The Staebler-Wronski effect and the Meyer-Neldel rule in amorphous silicon
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