Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition-Reference-Cited by-同舟云学术

Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition

Published:2016-08-22 Issue:8 Volume:109 Page:081907
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Enriquez Erik¹^ORCID,Zhang Yingying²,Chen Aiping¹^ORCID,Bi Zhenxing¹,Wang Yongqiang¹,Fu Engang¹,Harrell Zachary³,Lü Xujie¹,Dowden Paul¹,Wang Haiyan⁴,Chen Chonglin³,Jia Quanxi¹

Affiliation:

1. Center for Integrated Nanotechnology (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA

2. Department of Chemistry, Tsinghua University, Beijing 100084, China

3. Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas 78249, USA

4. Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, USA

Funder

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4961880

Reference38 articles.

1. Graphene-based composite materials

2. Graphene: Status and Prospects

3. Two-dimensional intrinsic and extrinsic ferromagnetic behavior of layeredLa1.2Sr1.8Mn2O7single crystals

4. A New Class of Room-Temperature Multiferroic Thin Films with Bismuth-Based Supercell Structure

5. Non-stoichiometric FexWN2: Leaching of Fe from layer-structured FeWN2

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4. Publisher's Note: “Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition” [Appl. Phys. Lett. 109, 081907 (2016)];Applied Physics Letters;2016-11-07