Large-scale fabrication of CMOS-compatible silicon-OLED heterojunctions enabled infrared upconverters

Author:

Rao Tianyu1ORCID,Hao Qun123,Mu Ge1ORCID,Qin Tianling1,Tan Yimei1,Zhao Pengfei1,Kong Dexi4ORCID,Chen Menglu123ORCID,Tang Xin123ORCID

Affiliation:

1. School of Optics and Photonics, Beijing Institute of Technology 1 , Beijing 100081, China

2. Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology 2 , Beijing 100081, China

3. Yangtze Delta Region Academy of Beijing Institute of Technology 3 , Jiaxing 314019, China

4. Beijing BOE Optoelectronics Technology Co., Ltd. 4 , Beijing 100176, China

Abstract

Infrared-to-visible upconverters have widespread application prospects, including bioimaging, night vision, and defense security. A typical upconverter is generally constructed by integrating an infrared photodetector (PD) detecting low-energy infrared with a visible light-emitting diode (LED) emitting high-energy visible light. However, when photocarriers transport through the interface between PD and LED, lateral current spreading is inevitably present, which leads to optical cross-talking and hinders the realization of high-resolution and large-area infrared imaging. Here, near-infrared (NIR) upconverters are fabricated via the integration of silicon (Si) NIR detectors with organic LED (OLED) by complementary metal–oxide–semiconductor compatible manufacturing processes. The pixelated indium tin oxide electrodes introduced as the interfacial carrier transfer channel effectively suppress the lateral current spreading and ensure that the photogenerated carrier of PD could transport into the OLED with a well-defined spatial resolution. The Si-OLED upconverters possess a wafer-level luminous area and large-scale fabrication capacity and realize high-resolution infrared imaging with a resolution as high as 3629 dpi. By changing the organic luminescent layer of OLED, the Si-OLED upconverters could emit red/green/blue visible light under NIR illumination with a low turn-on voltage of 3 V and an excellent upconversion efficiency of 9.2%. Furthermore, the large-area Si-OLED upconverters exhibit flexibility with an infrared upconversion ability even under bending.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Young Elite Scientists Sponsorship Program by CAST

Publisher

AIP Publishing

Subject

Computer Networks and Communications,Atomic and Molecular Physics, and Optics

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