Surface-gated quantum Hall effect in an InAs heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2210289
Reference21 articles.
1. The family (InAs, GaSb, AlSb) and its heterostructures: a selective review
2. Length dependence of quantized conductance in ballistic constrictions fabricated on InAs/AlSb quantum wells
3. Quantized conductance of ballistic constrictions in InAs/AlSb quantum wells
4. InAs-AlSb quantum wells in tilted magnetic fields
5. gfactor of electrons in an InAs quantum well
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1. In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells;APL Materials;2024-05-01
2. Gate Operation of InAs/AlGaSb Heterostructures with an Atomic-Layer-Deposited Insulating Layer;Applied Physics Express;2011-12-06
3. Determination of spin-orbit coefficients in semiconductor quantum wells;Physical Review B;2011-03-07
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5. (In,Ga)As gated-vertical quantum dot with an Al2O3 insulator;Applied Physics Letters;2007-02-05
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