Vacancy-type defects in Mg-doped InN probed by means of positron annihilation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3075907
Reference36 articles.
1. Indium nitride (InN): A review on growth, characterization, and properties
2. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
3. Structure and electronic properties of InN and In-rich group III-nitride alloys
4. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
5. Unusual properties of the fundamental band gap of InN
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2. Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys;Journal of Physics: Condensed Matter;2019-08-20
3. Sol–gel spin coating growth of magnesium-doped indium nitride thin films;Vacuum;2018-09
4. Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InN;Applied Physics Letters;2015-06-08
5. Vacancies in InxGa1−xN/GaN multiple quantum wells fabricated onm-plane GaN probed by a monoenergetic positron beam;Applied Physics Express;2015-04-30
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