Dynamic properties of InAs∕InP (311)B quantum dot Fabry–Perot lasers emitting at 1.52μm-Reference-Cited by-同舟云学术

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Dynamic properties of InAs∕InP (311)B quantum dot Fabry–Perot lasers emitting at 1.52μm

Published:2008-07-14 Issue:2 Volume:93 Page:021101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Martinez A.,Merghem K.,Bouchoule S.,Moreau G.,Ramdane A.,Provost J.-G.,Alexandre F.,Grillot F.,Dehaese O.,Piron R.,Loualiche S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2957479

Reference21 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well

3. Low-threshold high-T/sub 0/ 1.3-/spl mu/m InAs quantum-dot lasers due to p-type modulation doping of the active region

4. High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers

5. 10 Gbit∕s data modulation using 1.3 [micro sign]m InGaAs quantum dot lasers

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