Properties of Ga1−xInxN mixed crystals and Ga1−xInxN/GaN quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372214
Reference18 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
4. Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells
5. Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering
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1. Electron–phonon interaction in quasi-1D ternary mixed crystals of polar semiconductors;Modern Physics Letters B;2015-08-30
2. Influence of surface optical phonons on exciton binding energies of a quasi-one-dimensional wurtzite GaN-based nanowire: Quantum size effect;Journal of Applied Physics;2013-03-07
3. Phonon and electron-hole plasma effects on binding energies of excitons in wurtzite GaN/InxGa1−xN quantum wells;The European Physical Journal B;2012-02
4. Quantum confinement effects on energy gaps and electron and hole effective masses of quantum well AlN;Physica E: Low-dimensional Systems and Nanostructures;2011-07
5. Experimental investigation of long-wavelength optical lattice vibrations in quaternary AlxInyGa1−x−yN alloys and comparison with results from the pseudo-unit cell model;Physica B: Condensed Matter;2011-04
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