Doping density dependence of intersubband transitions in GaAs/AlxGa1−xAs quantum‐well structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344997
Reference10 articles.
1. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
2. Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides
3. New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices
4. Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivity
5. Photovoltaic detection of infrared light in a GaAs/AlGaAs superlattice
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1. Strong Coupling in All-Dielectric Intersubband Polaritonic Metasurfaces;Nano Letters;2020-12-21
2. Doping dependent blue shift and linewidth broadening of intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells;Applied Physics Letters;2015-09-14
3. Collective and single-particle intersubband excitations in narrow quantum wells selected by infrared absorption and resonant Raman scattering;Physical Review B;2006-11-06
4. Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x N/GaN multiple quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2005-01
5. Intersubband electronic Raman scattering in narrow GaAs single quantum wells dominated by single-particle excitations;Physical Review B;2004-10-25
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