Preparation of hydrogenated amorphous silicon with tunable gap by homogeneous chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347106
Reference44 articles.
1. High Rate Preparation of a-Si:H by Reactive Evaporation Method
2. Electronic transport and state distribution in amorphous Si films
3. Optical properties of UV laser photolytic deposition of hydrogenated amorphous silicon (a‐Si:H)
4. Enhancement of film deposition rate due to the production of Si2H6as an intermediate in the photodecomposition of SiH4using an ArF excimer laser
5. Kinetics and mechanism of amorphous hydrogenated silicon growth by homogeneous chemical vapor deposition
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Correlations between structural and optoelectronic properties of a-Si:H grown by homogeneous chemical vapor deposition;Journal of Non-Crystalline Solids;1996-10
2. Effect of the gas pressure during deposition on the optical properties of HOMOCVD a-Si:H thin films;Solar Energy Materials and Solar Cells;1995-01
3. Influence of the substrate temperature on the photoelectric properties of HOMOCVD a-Si:H;Solar Energy Materials and Solar Cells;1995-01
4. The relationship between the film properties and the preparation conditions for a-Si:H grown by homogeneous chemical vapour deposition;Semiconductor Science and Technology;1994-12-01
5. Low Filament Temperature Deposition of a-Si:H by Catalytic Chemical Vapor Deposition;MRS Proceedings;1993-01-01
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