Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories-Reference-Cited by-同舟云学术

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

Published:2015-03-23 Issue:12 Volume:106 Page:123303
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cui Ze-Qun¹^ORCID,Wang Shun¹,Chen Jian-Mei¹,Gao Xu¹,Dong Bin¹,Chi Li-Feng¹,Wang Sui-Dong¹

Affiliation:

1. Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, People's Republic of China

Funder

Collaborative Innovation Center of Suzhou Nano Science & Technology

National Basic Research Development Program of China

Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)

Qing Lan Project of Jiangsu Province

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4916511

Reference37 articles.

1. Towards the Development of Flexible Non-Volatile Memories

2. Polymer and Organic Nonvolatile Memory Devices

3. Controllable Shifts in Threshold Voltage of Top-Gate Polymer Field-Effect Transistors for Applications in Organic Nano Floating Gate Memory

4. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

5. Organic field-effect transistor nonvolatile memories based on hybrid nano-floating-gate

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