Photogating of mono- and few-layer MoS2
Author:
Affiliation:
1. Walter Schottky Institut and Physik-Department, Technische Universität München, 85748 Garching, Germany
2. Nanosystems Initiative Munich (NIM), Schellingstr. 4, 80799 München, Germany
Funder
BaCaTeC
Deutsche Forschungsgemeinschaft (DFG)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4916517
Reference25 articles.
1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2. Single-layer MoS2 transistors
3. Atomically ThinMoS2: A New Direct-Gap Semiconductor
4. Single-Layer MoS2 Phototransistors
5. Ultrasensitive photodetectors based on monolayer MoS2
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