Affiliation:
1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University , Tianjin 300350, China
Abstract
The study of anisotropic magnetoresistance (AMR) holds dual significance in both theoretical and applied contexts. The underlying mechanisms of AMR remain unclear, and the phenomenon of AMR sign reversal (positive and negative transitions in values) has garnered multiple interpretations, demanding experimental verification. In this work, the effect of epitaxial strain on magnetic and transport properties of perovskite manganese oxide La0.35Sr0.65MnO3 films is investigated. The AMR demonstrates sign reversal and symmetry change behaviors. The symmetry changes of AMR stem from the competition between Zeeman energy, exchange interaction energy, and magnetocrystalline anisotropy energy. The sign reversal of AMR is attributed to the change in the density of states of spin up and spin down of conduction electrons during the magnetic phase transition induced by epitaxial strain. Our work offers experimental evidence and a reasonable explanation for the origin of the sign reversal of AMR.
Funder
National Natural Science Foundation of China