Passivation of HgCdTe with CdS thin films: Correlation of device characteristics with surface spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342799
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4. Composition and growth mechanism of anodic oxide on Hg(1−x)CdxTe
5. Thermal stability of the anodic oxide/Hg1−xCdxTe interface
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1. Low Temperature Metalorganic Chemical Vapor Deposition of Semiconductor Thin Films for Surface Passivation of Photovoltaic Devices;MRS Advances;2016-05-23
2. Studies on surface processing and passivation of p-Hg1−xCdxTe;Semiconductor Science and Technology;2007-12-12
3. Electrical characterization of the p-Hg1−xZnxTe interface after anodic sulfidization treatments;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-07
4. Surfaces/interfaces of narrow-gap II-VI compounds;Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications;1997
5. Growth and characterization of anodic sulphide films on Hg0.80Cd0.20Te grown from freshly prepared solution and stored solution;Materials Science and Engineering: B;1994-09
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