Effect of uniaxial pressure on the threshold current of double‐heterostructure GaAs lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1654309
Reference7 articles.
1. JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
2. DOUBLE‐HETEROSTRUCTURE INJECTION LASERS WITH ROOM‐TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2
3. FABRY‐PEROT STRUCTURE AlxGa1−xAs INJECTION LASERS WITH ROOM‐TEMPERATURE THRESHOLD CURRENT DENSITIES OF 2530 A/cm2
4. STRIPE‐GEOMETRY DOUBLE HETEROSTRUCTURE JUNCTION LASERS: MODE STRUCTURE AND cw OPERATION ABOVE ROOM TEMPERATURE
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1. Polarization dynamics of strained InGaAsP-InP lasers: spectral properties and lateral near-field behaviour;Quantum and Semiclassical Optics: Journal of the European Optical Society Part B;1998-02
2. Gigahertz switching behavior of polarization‐bistable InGaAsP/InP lasers under high‐frequency current modulation;Applied Physics Letters;1994-02-14
3. Electro‐optical effects of externally applied 〈100〉 uniaxial stress on InGaAsP 1.3 and 1.5 μm injection lasers;Applied Physics Letters;1988-05-02
4. Effect of stress relaxation on polarization of InGaAsP buried heterostructure lasers by a repetitive temperature change;Journal of Applied Physics;1987-03
5. Temperature‐dependent polarization behavior of semiconductor lasers;Applied Physics Letters;1984-10
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