Electron spin quantum beats and room temperature g factor in GaAsN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3186076
Reference25 articles.
1. Springer Series in Material Science;Erol A.,2008
2. Dilute III-V Nitride Semiconductors and Material Systems
3. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
4. Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements
5. Band Anticrossing in GaInNAs Alloys
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