Influence of Γ-X resonances on Γ1 ground state electron occupation in type-I GaAs/AlAs superlattice
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118637
Reference7 articles.
1. Quantum well carrier sweep out: relation to electroabsorption and exciton saturation
2. Microwave oscillations of current in III–V semiconductors
3. Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Γ-X mixing
4. Evidence forΓ−XTransport in Type-I GaAs/AlAs Semiconductor Superlattices
5. Delayed photocurrent affected by Γ‐X resonance in GaAs/AlAs type‐I short‐period superlattices
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