Determination of the nitrogen doping of liquid phase epitaxy GaP and GaxIn1−xP alloys by optical absorption and photoluminescence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332713
Reference18 articles.
1. Alloying induced shift between excitation and luminescence of the nitrogen bound exciton in GaPxAs1−x alloys
2. Alloying induced shift between excitation and luminescence of the nitrogen bound exciton in GaPxAs1−x alloys
3. Excitation spectroscopy in GaP-rich GaxIn1-xP alloys doped with nitrogen
4. Electroluminescence in GaAsxP1−x, InxGa1−xP, and AlxGa1−xP Junctions with x≲0.01
5. Détermination précise de la composition de couches epitaxiées Ga1−xInxP (0≤x≤0,10)
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