Growth temperature dependent radiative relaxation in AlGaAs/GaAs multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101893
Reference7 articles.
1. AlGaAs OEIC transmitters
2. Interfacial recombination velocity in GaAlAs/GaAs heterostructures
3. Recombination dynamics in GaAs/Al<inf>x</inf>Ga<inf>1- x</inf>As quantum well structures
4. Free excitons in room-temperature photoluminescence of GaAs-AlxGa1−xAsmultiple quantum wells
5. Localization induced electron‐hole transition rate enhancement in GaAs quantum wells
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1. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001
2. Heterostructure interface characterization using scanning tunneling microscope excited time-resolved luminescence;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-03-01
3. Well-Width Dependence of the Exciton Lifetime in GaAs/AlGaAs Quantum Wells;Acta Physica Sinica (Overseas Edition);1994-05
4. Minority‐carrier recombination kinetics and transport in ‘‘surface‐free’’ GaAs/AlxGa1−xAs double heterostructures;Journal of Applied Physics;1993-06-15
5. Metastable energy distribution and localization of spatially indirect excitons;Physical Review B;1992-04-15
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