Capacitance-voltage characteristics of ZnO∕GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2108107
Reference26 articles.
1. MBE growth and properties of ZnO on sapphire and SiC substrates
2. Electronic structures of hexagonal ZnO/GaN interfaces
3. Band alignment at a ZnO/GaN (0001) heterointerface
4. Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy
5. Control of polarity of ZnO films grown by plasma-assisted molecular-beam epitaxy: Zn- and O-polar ZnO films on Ga-polar GaN templates
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