Over 1.3μm continuous-wave laser emission from InGaSb quantum-dot laser diode fabricated on GaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1931046
Reference14 articles.
1. Quantum dot lasers: breakthrough in optoelectronics
2. Low-threshold quantum dot lasers with 201 nm tuning range
3. Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-µm P-Doped Quantum-Dot Lasers without Current Adjustments
4. Hole storage in GaSb/GaAs quantum dots for memory devices
5. Over 1.3 [micro sign]m CW laser emission from InGaSb quantum-dot vertical-cavity surface-emitting laser on GaAs substrate
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