Probing the electric field-induced doping mechanism in YBa2Cu3O7 using computed Cu K-edge x-ray absorption spectra
Author:
Affiliation:
1. Université Grenoble Alpes, CNRS, SIMAP, 38000 Grenoble, France
2. Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
3. Characterization Facility, University of Minnesota, Minneapolis, Minnesota 55455, USA
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5055283
Reference27 articles.
1. Insulator-to-metal transition in ZnO by electric double layer gating
2. High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids
3. Electrically Induced Ferromagnetism at Room Temperature in Cobalt-Doped Titanium Dioxide
4. Phase Diagram of Electrostatically DopedSrTiO3
5. Liquid-gated interface superconductivity on an atomically flat film
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Second dome of superconductivity in YBa2Cu3O7 at high pressure;Physical Review B;2024-07-11
2. Lessons Learned from Catalysis to Qubits: General Strategies to Build Accessible and Accurate First-Principles Models of Point Defects;The Journal of Physical Chemistry C;2023-11-08
3. Artificial Neural Network-Based Density Functional Approach for Adiabatic Energy Differences in Transition Metal Complexes;Journal of Chemical Theory and Computation;2023-10-16
4. First-principles calculation of the optical properties of the YBa2Cu3O7−δ oxygen vacancies model;RSC Advances;2023
5. Electric field-induced oxygen vacancies in YBa2Cu3O7;The Journal of Chemical Physics;2021-06-14
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3