Electron-beam-induced reactivation of Si dopants in hydrogenated GaAs: A minority carrier generation effect or an energetic electron excitation effect?-Reference-Cited by-同舟云学术

Electron-beam-induced reactivation of Si dopants in hydrogenated GaAs: A minority carrier generation effect or an energetic electron excitation effect?

Published:2000-11-13 Issue:20 Volume:77 Page:3206-3208
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Silvestre S.,Bernard-Loridant D.,Constant E.,Constant M.,Chevallier J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1324988

Reference11 articles.

1. Light-enhanced reactivation of donors in hydrogenatedn-type GaAs

2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

3. Isotope effect on the reactivation of neutralized Si dopants in hydrogenated or deuterated GaAs: The role of hot electrons

4. Infrared study of light-induced reactivation of neutralized dopants in hydrogenated n-type GaAs doped with silicon

5. Strong isotope effects in the dissociation kinetics of Si–H and Si–D complexes in GaAs under ultraviolet illumination

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