Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra-Reference-Cited by-同舟云学术

Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra

Published:2021-04-21 Issue:15 Volume:129 Page:155302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Shlyakhov I.¹^ORCID,Iakoubovskii K.¹,Banerjee S.²,Gaur A.²,Lin D.²,Asselberghs I.²,Radu I.²,Chai J.³,Yang M.³,Wang S. J.³,Houssa M.¹^ORCID,Stesmans A.¹,Afanas’ev V.¹

Affiliation:

1. Department of Physics and Astronomy, University of Leuven B-3001, Leuven, Belgium

2. IMEC—Kapeldreef 75, B-3001 Leuven, Belgium

3. Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 11760, Singapore

Funder

KU Leuven Internal Fund

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0046305

Reference34 articles.

1. Electronic structure of two-dimensional crystals fromab initiotheory

2. Atomically ThinMoS2: A New Direct-Gap Semiconductor

3. Electronic properties of single-layer and multilayer transition metal dichalcogenidesMX2(M= Mo, W andX= S, Se)

4. Monolayer MoS2: Trigonal warping, theΓvalley, and spin-orbit coupling effects

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