Nonlinear piezoresistance coefficients of semiconductors-Reference-Cited by-同舟云学术

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Nonlinear piezoresistance coefficients of semiconductors

Published:2019-12-14 Issue:22 Volume:126 Page:225701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Matsuda Kazunori¹^ORCID,Uyama Hiroki¹,Tsutsui Kazuo²^ORCID

Affiliation:

1. Department of Nano and Bio Material Science, Tokushima Bunri University, 1314-1 Shido, Sanuki, Kagawa 769-2101, Japan

2. Laboratory for Future Interdisciplinary Research of Science and Technology, Institute of Innovation Research, Tokyo Institute of Technology, 4259 Nagatsuda-cho, Midori-ku, Yokohama, Kanagawa 226-8503, Japan

Funder

Japan Society for the Promotion of Science

JSPS KAKENHI

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5121884

Reference16 articles.

1. Nonlinear piezoresistance effects in silicon

2. Comment on “Second-Order Piezoresistance Coefficients of n-Type Silicon”

3. Distortion of Energy Surfaces by a Strain Field

4. Origin of the shear piezoresistance coefficientπ44ofn-type silicon

5. A high sensitivity and high linearity pressure sensor based on a peninsula-structured diaphragm for low-pressure ranges

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review: Numerical Simulations of Semiconductor Piezoresistance for Computer-Aided Designs;IEEE Journal of the Electron Devices Society;2023

2. Atomic-resolution holography for active-site structure;Japanese Journal of Applied Physics;2020-01-01

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