High resolution synchrotron radiation based photoemission study of the in situ deposition of molecular sulphur on the atomically clean InGaAs surface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4728213
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1. High temperature thermal stability studies of ultrathin Al2O3 layers deposited on native oxide and sulphur passivated InGaAs surfaces;Microelectronic Engineering;2015-11
2. High temperature thermal stability investigations of ammonium sulphide passivated InGaAs and interface formation with Al2O3 studied by synchrotron radiation based photoemission;Applied Surface Science;2014-10
3. Phase Stabilization of Al:HfO2 Grown on InxGa1–xAs Substrates (x = 0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition;ACS Applied Materials & Interfaces;2014-02-21
4. Synchrotron radiation photoemission study of interface formation between MgO and the atomically clean In0.53Ga0.47As surface;physica status solidi (RRL) - Rapid Research Letters;2013-11-19
5. High resolution photoemission study of interface formation between MgO and the selenium passivated InAs (100) surface;Applied Surface Science;2013-11
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