Effect of implanted ion species on the decay kinetics of 2.7 eV photoluminescence in thermal SiO2films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363713
Reference14 articles.
1. Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films: I .
2. Photoluminescence study of defects in ion‐implanted thermal SiO2films
3. Photoluminescence study on point defects in buried SiO2film formed by implantation of oxygen
4. Isoelectronic series of twofold coordinated Si, Ge, and Sn atoms in glassy SiO2: a luminescence study
5. 2.7-eV luminescence in as-manufactured high-purity silica glass
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