Thermal stability and doping efficiency of intrinsic modulation doping in InP-based structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124802
Reference11 articles.
1. Molecular beam epitaxial GaAs grown at low temperatures
2. Investigation of interface intermixing and roughening in low‐temperature‐grown AlAs/GaAs multiple quantum wells during thermal annealing by chemical lattice imaging and x‐ray diffraction
3. Electrical properties of InP grown by gas‐source molecular beam epitaxy at low temperature
4. Phosphorus antisite defects in low-temperature InP
5. Origin ofn‐type conductivity of low‐temperature grown InP
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal stability of semi-insulating InP epilayers: The roles of dicarbon and carbon-hydrogen centers;Physical Review B;2001-04-20
2. Quantum well intermixing caused by nonstoichiometric InP;Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107)
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