Carbon-nanotube-based single-electron/hole transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2161017
Reference27 articles.
1. Fabrication technique for Si single-electron transistor operating at room temperature
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4. Single‐electron effects in a point contact using side‐gating in delta‐doped layers
5. Coulomb-blockade oscillations in disordered quantum wires
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