Temperature dependence of noise in a GaAs metal-semiconductor field effect transistor at microwave frequencies
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122416
Reference7 articles.
1. Behaviour of a low-noise microwave f.e.t. at low temperature
2. Performance of GaAs MESFET's at Low Temperatures (Short Papers)
3. On-wafer microwave measurement setup for investigations on HEMTs and high-T/sub c/ superconductors at cryogenic temperatures down to 20 K
4. Noise parameter measurement of microwave transistors at cryogenic temperature
5. Temperature dependent study of the microwave performance of 0.25-μm gate GaAs MESFETs and GaAs pseudomorphic HEMTs
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1. General adjoint approach to the physics-based noise modeling of semiconductor devices through Langevin sources;Journal of Applied Physics;2007-01
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