Orientation effects in the LPE growth of GaInAsP quaternary alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90374
Reference14 articles.
1. Photoemission from cesium‐oxide‐activated InGaAsP
2. High‐quantum‐efficiency photoemission from an InGaAsP photocathode
3. Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m
4. GaInAsP-InP Double Heterostructure Lasers Prepared by a New LPE Apparatus
5. 1.3 µm CW Operation of GaInAsP/InP DH Diode Lasers at Room Temperature
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1. In situ observation for semiconductor solution growth using a near-infrared microscope;Journal of Crystal Growth;2005-02
2. High power InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.3 µm);Semiconductors;2001-10
3. High-power and single-mode DH InGaAsSb(Gd)/InAsSbP (λ=3.3 μm) diode lasers;SPIE Proceedings;2001-05-14
4. Liquid phase epitaxial growth and characterization of thin In1−xGaxAsyP1–y layers lattice-matched to InP;Crystal Research and Technology;1994
5. Saturation Behaviour of In – Ga – As Melts and Growth of In.53Ga.47As Lattice-matched to (001) InP Substrates;Crystal Research and Technology;1991
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