Influence of dislocations on diffusion‐induced nonequilibrium point defects in III‐V compounds-Reference-Cited by-同舟云学术

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Influence of dislocations on diffusion‐induced nonequilibrium point defects in III‐V compounds

Published:1989-02-27 Issue:9 Volume:54 Page:849-851
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Marioton B. P. R.,Tan T. Y.,Gösele U.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.100846

Reference20 articles.

1. Diffusion of zinc in gallium arsenide: A new model

2. Examination of models for Zn diffusion in GaAs

3. Substitutional-interstitial diffusion with bulk vacancy generation in semiconductors

4. Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxy

5. Influence of growth temperature on Be incorporation in molecular beam epitaxy GaAs epilayers

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1. Point Defects, Diffusion, and Precipitation;Materials Science and Technology;2013-02-15

2. Diffusion mechanism of implanted Be in GaAs;physica status solidi (b);2007-12-14

3. The origin of shallow etch pit defects in low dislocation density GaP crystals;Journal of Applied Physics;1999-09-15

4. Modeling the diffusion of implanted Be in GaAs;Journal of Applied Physics;1995-08

5. Evidence of point defect supersaturation during Zn diffusion in InP single crystals;Journal of Applied Physics;1995-03-15

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