Wideband heterodyne detection in the far infrared with extrinsic Ge photoconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332679
Reference11 articles.
1. Far infrared heterodyne detectors
2. Heterodyne detection at 337 μm in epitaxial GaAs
3. Heterodyne detection experiments at 118.6 um in Ge:Ga
4. Far‐infrared detection using photoconductivity of negative donor ion states in silicon
5. Speed limitation of Ge far-infrared photoconductive detectors
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1. Time-resolved electronic capture inn-type germanium doped with antimony;Physical Review B;2014-01-29
2. Characterization of photoconducting materials using variable-length picosecond terahertz pulses;SPIE Proceedings;1999-04-29
3. Ge:Ga Far-Infrared Photoconductor with Low Compensation;Japanese Journal of Applied Physics;1990-09-20
4. Subnanosecond far infrared photoconductivity from a GaAs/AlGaAs multiquantum well;Journal of Applied Physics;1990-08-15
5. A very wide-band frequency response measurement system using optical heterodyne detection;IEEE Transactions on Instrumentation and Measurement;1989-04
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