Effective passivation of slow interface states at the interface of single crystalline Gd2O3 and Si(100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2912523
Reference15 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Crystallization kinetics and microstructure-dependent leakage current behavior of ultrathin HfO2 dielectrics: In situ annealing studies
3. Crystallization in HfO2 gate insulators with in situ annealing studied by valence-band photoemission and x-ray absorption spectroscopy
4. Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition
5. Application of HfSiON as a gate dielectric material
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