Observation of the crystalline orientation dependence of the semiconductor–metal transition for thermal oxidation induced VO2 films over amorphous quartz glasses
Author:
Affiliation:
1. State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan City, Hubei Province 430070, People’s Republic of China
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
111 Project
The Key R&D Project of Hubei Province
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0074628
Reference33 articles.
1. Gate-controlled VO 2 phase transition for high-performance smart windows
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4. Conductive thermal diode based on the thermal hysteresis of VO2 and nitinol
5. Comparative study of the metal insulator transition of a VO2 film with simultaneous infrared thermography and electric measurements
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3. The effect of vacuum preheating on the structure, electric, and optical properties of W-doped VO2 films prepared from thermal oxidation;Japanese Journal of Applied Physics;2023-05-01
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