High detectivity, near-infrared organic printed photodiode

Abstract

Sensitive detection of near-infrared (NIR) light could enable several important applications in optical communications, quality control, and sensing in industries, such as automotive and aerospace, and human–machine interface (HMI) biometrics. In this work, we demonstrate NIR photodetectors based on an organic bulk heterojunction absorbing layer with state-of-the-art performance across critical response metrics. The external quantum efficiency spectrum of the devices presented extends from 500 nm to approximately 900 nm covering both visible and NIR wavelengths. The organic photodiodes (OPDs) show specific detectivities of around 7.4×1011 Jones, which is comparable to the state of the art organic devices. Furthermore, the NIR OPD devices show a linear dynamic range (LDR) of ∼74 dB.