The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes
Author:
Affiliation:
1. Department of Electronic and Electrical Engineering, University of Bath, Bath, United Kingdom
2. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 OFS, United Kingdom
Funder
RCUK | Engineering and Physical Sciences Research Council
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4986434
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