Multiscanning electron beam annealing of phosphorus‐implanted silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91616
Reference8 articles.
1. Laser annealing of boron‐implanted silicon
2. Two-stage laser annealing of lattice disorder in phosphorus implanted silicon
3. Silicon solar cells by high-speed low-temperature processing
4. A laser‐scanning apparatus for annealing of ion‐implantation damage in semiconductors
5. Physical and electrical properties of laser‐annealed ion‐implanted silicon
Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature evolution during scanning electron beam processing of silicon;Applied Physics A Materials Science and Processing;1996-05
2. Pseudoline electron beam recrystallization of silicon-on-insulator;Materials Science Reports;1989-01
3. Transient annealing of semiconductors by laser, electron beam and radiant heating techniques;Reports on Progress in Physics;1985-08-01
4. Transient annealing as a tool for the investigation of thin‐film–substrate solid‐phase reactions;Journal of Applied Physics;1985-08
5. Tailored emitter ion-implanted silicon solar cells;Solar Cells;1984-02
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