Room-temperature, RF-activated, quantum effects via engineered defect sites in thin-film AlN, Al2O3, and SnOx

Abstract

The behavior of a sine wave propagated through thin films of aluminum nitride (AlN), aluminum oxide (Al2O3), and tin oxide (SnOx) with engineered buried defect sites may suggest quantum excitation and defect-mediated waveform modulations. Two distinct methods to induce these buried defects, etch pattern defects (EPD) and indentation pattern defects (IPD), were employed to detect these interactions. All the experiments were conducted at room temperature (21 °C) over a frequency range between 5 and 1000 kHz. In addition, EPD and IPD devices were composed of AlN, Al2O3, and SnOx. An inverse relationship between excitation frequency and voltage is observed for all devices. All these devices exhibited a relaxation time ranging between 0.2 and 0.75 µs. Devices without these engineered defect sites preserve the waveform integrity, emphasizing the impact of the buried defect sites. This research focuses on the relationship between defect type, excitation frequency, and voltage to understand the deeper mechanisms at play in these quantum defect-driven wave alterations in AlN, Al2O3, and SnOx thin films.