Two-subband-populated AlGaN∕GaN heterostructures probed by electrically detected and microwave-modulated magnetotransport measurements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2339030
Reference15 articles.
1. Comparative study of ultrafast intersubband electron scattering times at ∼1.55 μm wavelength in GaN/AlGaN heterostructures
2. Effective mass of two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterojunction
3. Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis
4. AlxGa1−xN/GaN band offsets determined by deep-level emission
5. Occupation of the double subbands by the two-dimensional electron gas in the triangular quantum well atAlxGa1−xN/GaNheterostructures
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2. Magneto-transport Spectroscopy of the First and Second Two-dimensional Subbands in Al0.25Ga0.75N/GaN Quantum Point Contacts;Scientific Reports;2017-02-22
3. Dependence of spin dynamics on in-plane magnetic field in AlGaN/GaN quantum wells;EPL (Europhysics Letters);2015-12-01
4. Growth of nonpolar m-plane GaN epitaxial film on a lattice-matched (100) β-LiGaO2 substrate by chemical vapor deposition;Thin Solid Films;2011-05
5. MOVPE growth and properties of non-polar InGaN/GaN multiple quantum wells on γ-LiAlO2 substrates;Journal of Crystal Growth;2010-04
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