ClockwiseC‐Vhysteresis phenomena of metal–tantalum‐oxide–silicon‐oxide–silicon ( p) capacitors due to leakage current through tantalum oxide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339102
Reference13 articles.
1. Quadruply self-aligned stacked high-capacitance RAM using Ta2O5high-density VLSI dynamic memory
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3. Leakage‐Current Increase in Amorphous Ta2 O 5 Films Due to Pinhole Growth during Annealing Below 600°C
4. Selective Studies of Crystalline Ta2 O 5 Films
5. Oxidation temperature dependence of the dc electrical conduction characteristics and dielectric strength of thin Ta2O5films on silicon
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