Improvement of (Pb1−xLax)(ZryTi1−y)1−x/4O3 ferroelectric thin films by use of SrRuO3/Ru/Pt/Ti bottom electrodes-Reference-Cited by-同舟云学术

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Improvement of (Pb1−xLax)(ZryTi1−y)1−x/4O3 ferroelectric thin films by use of SrRuO3/Ru/Pt/Ti bottom electrodes

Published:1998-03-09 Issue:10 Volume:72 Page:1182-1184
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Kuo-Shung,Tseng Tzu-Feng,Lin I-Nan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.121007

Reference14 articles.

1. Ferroelectric Memories

2. Ferroelectric memories

3. Electrical characteristics of ferroelectric PZT thin films for DRAM applications

4. Ferroelectric thin films for electronic applications

5. Fatigue and retention in ferroelectric Y‐Ba‐Cu‐O/Pb‐Zr‐Ti‐O/Y‐Ba‐Cu‐O heterostructures

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1. Epitaxial conducting ABO3 perovskite oxide thin films;Journal of Applied Physics;2023-06-22

2. Extraordinary Hall balance in ultrathin SrRuO3 bilayers;Journal of Physics: Materials;2020-03-17

3. Electrical behavior of Pb0.95La0.05Zr0.54Ti0.46O3 thin film based capacitors: Influence of space charge region;Journal of Applied Physics;2018-07-21

4. Effect of La and W dopants on dielectric and ferroelectric properties of PZT thin films prepared by sol–gel process;Applied Physics A;2017-11-29

5. Characterization of the Sol-Gel Derived PZT Thick Films on Metal Substrates;Recent Developments in Electronic Materials and Devices;2012-04-03

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