Magneto-optical study of electron occupation and hole wave functions in stacked self-assembled InP quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1383807
Reference11 articles.
1. Quantum dot lasers: breakthrough in optoelectronics
2. Room-temperature lasing via ground state of current-injected vertically aligned InP/GaInP quantum dots
3. Short-wavelength laser diodes based on AlInAs/AlGaAs self-assembled quantum dots
4. Electronic structure of strainedInP/Ga0.51In0.49Pquantum dots
5. Electron and hole confinement in stacked self-assembled InP quantum dots
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1. Type-II InP quantum dots in wide-bandgap InGaP host for intermediate-band solar cells;Applied Physics Letters;2016-04-11
2. Electron and hole spins in InP/(Ga,In)P self-assembled quantum dots;Physical Review B;2012-09-24
3. Charge separation and temperature-induced carrier migration in Ga1−xInxNyAs1−ymultiple quantum wells;Physical Review B;2011-07-05
4. Annealing effect on InP vertical porous arrays;Science China Technological Sciences;2010-06
5. Hole and exciton energy levels inInP∕InxGa1−xPquantum dot molecules: Influence of geometry and magnetic field dependence;Physical Review B;2006-06-20
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