Yellow-green ZnCdSe/BeZnTe II-VI laser diodes grown on InP substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1492311
Reference14 articles.
1. 600 nm-Range GaInP/AlInP Multi-Quantum-Well (MQW) Lasers Grown on Misorientation Substrates by Gas Source Molecular Beam Epitaxy (GS-MBE)
2. Blue InGaN-based laser diodes with an emission wavelength of 450 nm
3. 600‐nm wavelength range GaInP/AlInP quasi‐quaternary compounds and lasers prepared by gas‐source molecular‐beam epitaxy
4. 560-nm-continuous wave laser emission from ZnSe-based laser diodes on GaAs
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4. Investigation of the n-side structures of II-VI compound semiconductor optical devices on InP substrates;Journal of Crystal Growth;2019-04
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