Ni-seeding effects on the properties of polycrystalline silicon–germanium grown at low temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1561574
Reference6 articles.
1. High performance low-temperature poly-Si n-channel TFTs for LCD
2. Mechanism of pulsed laser‐induced amorphization of silicon films
3. Structural and electrical properties of poly-SiGe thin films prepared by reactive thermal CVD
4. Low temperature poly-SixGe1−x deposited by reactive thermal CVD for thin film transistor application
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1. Carbon Nanotube Contact Plug on Silicide for CMOS Compatible Interconnect;IEEE Electron Device Letters;2016
2. Ni-Seeded Growth of Carbon Nanotubes on Graphite Felt for High-Performance Supercapacitors;Journal of The Electrochemical Society;2016
3. Microstructure difference of Ni induced poly-crystallized SiGe by changing the annealing atmosphere;Thin Solid Films;2008-11
4. Influences of GeF4 on poly-SiGe films prepared by reactive thermal CVD;Journal of Non-Crystalline Solids;2006-06
5. Silicon-based narrow-bandgap thin-film semiconductor materials: polycrystalline SiGe prepared by reactive thermal CVD;physica status solidi (a);2006-03
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